PART |
Description |
Maker |
2SC3071 |
High-hFE/ Low-Frequency General-Purpose Amp Applications NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications NPN Epitaxial Planar Silicon Transistor for High hFE, Low-Frequency General-Purpose Amplifier Applications(高直流电流增益,低频通用放大器应用的NPN硅外延平面型晶体 瑞展硅晶体管HFE的高,低频通用放大器应用(高直流电流增益,低频通用放大器应用的npn型硅外延平面型晶体管
|
Sanyo Semicon Device Sanyo Electric Co., Ltd.
|
2SC3576 |
High-hFE/ Low-Frequency General-Purpose Amp Applications High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3068 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC3068 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
2SC3355 2SC3355-T |
For amplify low noise and high frequency HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|